Dual N/P-Channel MOSFET, 640 mA, 870 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMG1016V-7

Κωδικός Προϊόντος της RS: 751-4082Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMG1016V-7
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N, P

Maximum Continuous Drain Current

640 mA, 870 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.3 Ω, 700 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

530 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Width

1.25mm

Transistor Material

Si

Typical Gate Charge @ Vgs

0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Height

0.6mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Dual N/P-Channel MOSFET, 640 mA, 870 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMG1016V-7
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P.O.A.

Dual N/P-Channel MOSFET, 640 mA, 870 mA, 20 V, 6-Pin SOT-563 Diodes Inc DMG1016V-7
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N, P

Maximum Continuous Drain Current

640 mA, 870 mA

Maximum Drain Source Voltage

20 V

Package Type

SOT-563

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

1.3 Ω, 700 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

530 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

1.7mm

Width

1.25mm

Transistor Material

Si

Typical Gate Charge @ Vgs

0.62 nC @ 4.5 V, 0.74 nC @ 4.5 V

Minimum Operating Temperature

-55 °C

Height

0.6mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Dual N/P-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more