Diodes Inc N-Channel MOSFET, 10 A, 30 V, 8-Pin SOIC DMG4466SSS-13

Κωδικός Προϊόντος της RS: 751-4105Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMG4466SSS-13
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

1.42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Length

4.95mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

10.5 nC @ 10 V

Width

3.95mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 9,25

€ 0,37 Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 11,47

€ 0,459 Μονάδας (Σε ένα πακέτο των 25) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 10 A, 30 V, 8-Pin SOIC DMG4466SSS-13
Επιλέγξτε συσκευασία

€ 9,25

€ 0,37 Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 11,47

€ 0,459 Μονάδας (Σε ένα πακέτο των 25) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 10 A, 30 V, 8-Pin SOIC DMG4466SSS-13

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
25 - 100€ 0,37€ 9,25
125+€ 0,21€ 5,25

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JOIN FOR FREE

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

33 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

1.42 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-25 V, +25 V

Transistor Material

Si

Number of Elements per Chip

1

Length

4.95mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

10.5 nC @ 10 V

Width

3.95mm

Height

1.5mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more