Diodes Inc Quad N/P-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC DMHC3025LSD-13

Κωδικός Προϊόντος της RS: 122-3273Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMHC3025LSD-13
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N, P

Maximum Continuous Drain Current

2.5 A, 7.8 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ, 80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Full Bridge

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

4

Width

3.95mm

Length

4.95mm

Typical Gate Charge @ Vgs

11.4 nC @ 10 V, 11.7 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 1.750,00

€ 0,70 Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2.170,00

€ 0,868 Μονάδας (Σε ένα καρούλι των 2500) Με Φ.Π.Α

Diodes Inc Quad N/P-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC DMHC3025LSD-13

€ 1.750,00

€ 0,70 Μονάδας (Σε ένα καρούλι των 2500) (Exc. Vat)Χωρίς Φ.Π.Α

€ 2.170,00

€ 0,868 Μονάδας (Σε ένα καρούλι των 2500) Με Φ.Π.Α

Diodes Inc Quad N/P-Channel MOSFET, 2.5 A, 7.8 A, 30 V, 8-Pin SOIC DMHC3025LSD-13
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N, P

Maximum Continuous Drain Current

2.5 A, 7.8 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

40 mΩ, 80 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.5 W

Transistor Configuration

Full Bridge

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

4

Width

3.95mm

Length

4.95mm

Typical Gate Charge @ Vgs

11.4 nC @ 10 V, 11.7 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more