Diodes Inc N-Channel MOSFET, 11 A, 12 V, 3-Pin SOT-346 DMN1019USN-7

Κωδικός Προϊόντος της RS: 165-8326Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMN1019USN-7
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-346

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

1.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.7mm

Length

3.1mm

Typical Gate Charge @ Vgs

50.6 nC @ 8 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.3mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 630,00

€ 0,21 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 781,20

€ 0,26 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 11 A, 12 V, 3-Pin SOT-346 DMN1019USN-7

€ 630,00

€ 0,21 Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 781,20

€ 0,26 Μονάδας (Σε ένα καρούλι των 3000) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 11 A, 12 V, 3-Pin SOT-346 DMN1019USN-7
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

12 V

Package Type

SOT-346

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

41 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.8V

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

1.2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Width

1.7mm

Length

3.1mm

Typical Gate Charge @ Vgs

50.6 nC @ 8 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.3mm

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 12V to 28V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more