Diodes Inc N-Channel MOSFET, 11 A, 12 V, 3-Pin SOT-346 DMN1019USN-7
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-346
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
1.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Typical Gate Charge @ Vgs
50.6 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
1.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 19,50
€ 0,39 Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 24,18
€ 0,484 Μονάδας (Σε ένα πακέτο των 50) Με Φ.Π.Α
Standard
50
€ 19,50
€ 0,39 Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 24,18
€ 0,484 Μονάδας (Σε ένα πακέτο των 50) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
50
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
12 V
Package Type
SOT-346
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
41 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
0.8V
Minimum Gate Threshold Voltage
0.35V
Maximum Power Dissipation
1.2 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Width
1.7mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.1mm
Typical Gate Charge @ Vgs
50.6 nC @ 8 V
Maximum Operating Temperature
+150 °C
Height
1.3mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 12V to 28V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products