N-Channel MOSFET, 5.8 A, 100 V, 8-Pin PowerDI3333-8 Diodes Inc DMN10H099SFG-7
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
100 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.35mm
Typical Gate Charge @ Vgs
25.2 nC @ 10 V
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.77V
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 0,48
Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,595
Μονάδας (Σε ένα καρούλι των 2000) (Including VAT) Με Φ.Π.Α
2000
€ 0,48
Μονάδας (Σε ένα καρούλι των 2000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,595
Μονάδας (Σε ένα καρούλι των 2000) (Including VAT) Με Φ.Π.Α
2000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
5.8 A
Maximum Drain Source Voltage
100 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
99 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
2.31 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.35mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Transistor Material
Si
Length
3.35mm
Typical Gate Charge @ Vgs
25.2 nC @ 10 V
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
0.77V
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Dual N-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products