Diodes Inc N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK DMN10H099SK3-13

Κωδικός Προϊόντος της RS: 921-1044PΚατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMN10H099SK3-13
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.2mm

Typical Gate Charge @ Vgs

25.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.77V

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 11,40

€ 0,57 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 14,14

€ 0,707 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK DMN10H099SK3-13
Επιλέγξτε συσκευασία

€ 11,40

€ 0,57 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 14,14

€ 0,707 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 17 A, 100 V, 3-Pin DPAK DMN10H099SK3-13

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

17 A

Maximum Drain Source Voltage

100 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

99 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.7mm

Transistor Material

Si

Number of Elements per Chip

1

Length

6.2mm

Typical Gate Charge @ Vgs

25.2 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

2.39mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.77V

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 100V to 950V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more