N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMN2450UFD-7

Κωδικός Προϊόντος της RS: 182-6892Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMN2450UFD-7
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

890 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

1.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.25mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Height

0.48mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,05

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,062

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMN2450UFD-7

€ 0,05

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,062

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 900 mA, 20 V, 3-Pin X1-DFN1212 Diodes Inc DMN2450UFD-7
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

900 mA

Maximum Drain Source Voltage

20 V

Package Type

X1-DFN1212

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

890 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

±12 V

Width

1.25mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

1.25mm

Typical Gate Charge @ Vgs

0.7 nC @ 4.5 V

Height

0.48mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more