Diodes Inc N-Channel MOSFET, 380 mA, 30 V, 3-Pin SOT-523 DMN313DLT-7

Κωδικός Προϊόντος της RS: 827-0487PΚατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMN313DLT-7
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

380 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

520 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

0.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.7mm

Typical Gate Charge @ Vgs

0.5 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 5,00

€ 0,05 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 6,20

€ 0,062 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 380 mA, 30 V, 3-Pin SOT-523 DMN313DLT-7
Επιλέγξτε συσκευασία

€ 5,00

€ 0,05 Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

€ 6,20

€ 0,062 Μονάδας (διαθέσιμο σε ένα καρούλι) Με Φ.Π.Α

Diodes Inc N-Channel MOSFET, 380 mA, 30 V, 3-Pin SOT-523 DMN313DLT-7

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

380 mA

Maximum Drain Source Voltage

30 V

Package Type

SOT-523 (SC-89)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3.2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

520 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

0.85mm

Transistor Material

Si

Number of Elements per Chip

1

Length

1.7mm

Typical Gate Charge @ Vgs

0.5 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Height

0.8mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more