Diodes Inc N-Channel MOSFET, 8 A, 30 V, 8-Pin SOIC DMN4800LSSL-13
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
1.46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Typical Gate Charge @ Vgs
8.7 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 27,50
€ 0,55 Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 34,10
€ 0,682 Μονάδας (Σε ένα πακέτο των 50) Με Φ.Π.Α
Standard
50
€ 27,50
€ 0,55 Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α
€ 34,10
€ 0,682 Μονάδας (Σε ένα πακέτο των 50) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
50
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
20 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.6V
Maximum Power Dissipation
1.46 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
1
Length
4.95mm
Typical Gate Charge @ Vgs
8.7 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products