N-Channel MOSFET, 300 mA, 50 V, 3-Pin SOT-23 Diodes Inc DMN53D0U-7

Κωδικός Προϊόντος της RS: 146-0956Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMN53D0U-7
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

520 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.4mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Length

3mm

Height

1mm

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,08

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,099

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 300 mA, 50 V, 3-Pin SOT-23 Diodes Inc DMN53D0U-7

€ 0,08

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,099

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 300 mA, 50 V, 3-Pin SOT-23 Diodes Inc DMN53D0U-7
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

300 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

520 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Width

1.4mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

0.6 nC @ 4.5 V

Length

3mm

Height

1mm

Forward Diode Voltage

1.4V

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

N-Channel MOSFET, 40V to 90V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more