N-Channel MOSFET, 407 mA, 60 V, 3-Pin X1-DFN1006 Diodes Inc DMN62D1LFB-7B
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
407 mA
Maximum Drain Source Voltage
60 V
Package Type
X1-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
1.07mm
Typical Gate Charge @ Vgs
0.45 nC @ 4.5V
Width
0.67mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.48mm
Χώρα Προέλευσης
China
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€ 0,08
Μονάδας (Σε ένα καρούλι των 10000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,099
Μονάδας (Σε ένα καρούλι των 10000) (Including VAT) Με Φ.Π.Α
10000
€ 0,08
Μονάδας (Σε ένα καρούλι των 10000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 0,099
Μονάδας (Σε ένα καρούλι των 10000) (Including VAT) Με Φ.Π.Α
10000
Ideate. Create. Collaborate
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
N
Maximum Continuous Drain Current
407 mA
Maximum Drain Source Voltage
60 V
Package Type
X1-DFN1006
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+150 °C
Length
1.07mm
Typical Gate Charge @ Vgs
0.45 nC @ 4.5V
Width
0.67mm
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.3V
Height
0.48mm
Χώρα Προέλευσης
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products