Diodes Inc Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 DMN65D8LDW-7

Κωδικός Προϊόντος της RS: 822-2602Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMN65D8LDW-7
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Maximum Power Dissipation

400 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

0.87 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

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€ 10,00

€ 0,10 Μονάδας (Σε ένα πακέτο των 100) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12,40

€ 0,124 Μονάδας (Σε ένα πακέτο των 100) Με Φ.Π.Α

Diodes Inc Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 DMN65D8LDW-7
Επιλέγξτε συσκευασία

€ 10,00

€ 0,10 Μονάδας (Σε ένα πακέτο των 100) (Exc. Vat)Χωρίς Φ.Π.Α

€ 12,40

€ 0,124 Μονάδας (Σε ένα πακέτο των 100) Με Φ.Π.Α

Diodes Inc Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 DMN65D8LDW-7

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

8 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

20V

Maximum Power Dissipation

400 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

1.35mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Length

2.2mm

Typical Gate Charge @ Vgs

0.87 nC @ 10 V

Height

1mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Dual N-Channel MOSFET, Diodes Inc.

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more