P-Channel MOSFET, 11 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMP1009UFDF-7

Κωδικός Προϊόντος της RS: 182-6905Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMP1009UFDF-7
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

12 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Typical Gate Charge @ Vgs

44 nC @ 8V

Maximum Operating Temperature

+150 °C

Length

2.05mm

Width

2.05mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

0.58mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,30

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,372

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 11 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMP1009UFDF-7

€ 0,30

Μονάδας (Σε ένα καρούλι των 3000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,372

Μονάδας (Σε ένα καρούλι των 3000) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 11 A, 12 V, 6-Pin U-DFN2020 Diodes Inc DMP1009UFDF-7
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

12 V

Package Type

U-DFN2020

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

30 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

0.3V

Maximum Power Dissipation

2 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Typical Gate Charge @ Vgs

44 nC @ 8V

Maximum Operating Temperature

+150 °C

Length

2.05mm

Width

2.05mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

0.58mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more