Diodes Inc P-Channel MOSFET, 17.5 A, 20 V, 8-Pin PowerDI3333-8 DMP2006UFG-7
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Λεπτομέρειες Προϊόντος
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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€ 16,20
€ 0,81 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α
€ 20,09
€ 1,004 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α
Standard
20
€ 16,20
€ 0,81 Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α
€ 20,09
€ 1,004 Μονάδας (Σε ένα πακέτο των 20) Με Φ.Π.Α
Standard
20
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 20 - 80 | € 0,81 | € 16,20 |
| 100 - 480 | € 0,57 | € 11,40 |
| 500 - 980 | € 0,52 | € 10,40 |
| 1000 - 2480 | € 0,47 | € 9,40 |
| 2500+ | € 0,42 | € 8,40 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
P
Maximum Continuous Drain Current
17.5 A
Maximum Drain Source Voltage
20 V
Package Type
PowerDI3333-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
17 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
41 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-10 V, +10 V
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
3.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
3.35mm
Height
0.8mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Λεπτομέρειες Προϊόντος
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products