P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2008UFG-7

Κωδικός Προϊόντος της RS: 822-2611Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMP2008UFG-7
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

20 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.35mm

Typical Gate Charge @ Vgs

72 nC @ 4.5 V

Width

3.35mm

Minimum Operating Temperature

-55 °C

Height

0.85mm

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,78

Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,967

Μονάδας (Σε ένα πακέτο των 25) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2008UFG-7
Επιλέγξτε συσκευασία

€ 0,78

Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 0,967

Μονάδας (Σε ένα πακέτο των 25) (Including VAT) Με Φ.Π.Α

P-Channel MOSFET, 11 A, 20 V, 8-Pin PowerDI3333-8 Diodes Inc DMP2008UFG-7
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Αγοράστε μαζικά

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
25 - 375€ 0,78€ 19,50
400 - 975€ 0,45€ 11,25
1000+€ 0,35€ 8,75

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

20 V

Package Type

PowerDI3333-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

17 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

41 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Transistor Material

Si

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

3.35mm

Typical Gate Charge @ Vgs

72 nC @ 4.5 V

Width

3.35mm

Minimum Operating Temperature

-55 °C

Height

0.85mm

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 12V to 25V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more