Diodes Inc P-Channel MOSFET, 6 A, 30 V, 8-Pin SOP DMP3056LSS-13

Κωδικός Προϊόντος της RS: 823-4037Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMP3056LSS-13
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.3mm

Typical Gate Charge @ Vgs

13.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

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€ 11,00

€ 0,44 Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 13,64

€ 0,546 Μονάδας (Σε ένα πακέτο των 25) Με Φ.Π.Α

Diodes Inc P-Channel MOSFET, 6 A, 30 V, 8-Pin SOP DMP3056LSS-13
Επιλέγξτε συσκευασία

€ 11,00

€ 0,44 Μονάδας (Σε ένα πακέτο των 25) (Exc. Vat)Χωρίς Φ.Π.Α

€ 13,64

€ 0,546 Μονάδας (Σε ένα πακέτο των 25) Με Φ.Π.Α

Diodes Inc P-Channel MOSFET, 6 A, 30 V, 8-Pin SOP DMP3056LSS-13

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

6 A

Maximum Drain Source Voltage

30 V

Package Type

SOP

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

65 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.1mm

Transistor Material

Si

Number of Elements per Chip

1

Length

5.3mm

Typical Gate Charge @ Vgs

13.7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

1.5mm

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more