Diodes Inc P-Channel MOSFET, 760 mA, 30 V, 3-Pin X2-DFN1006 DMP31D0UFB4-7B

Κωδικός Προϊόντος της RS: 770-5171PΚατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMP31D0UFB4-7B
brand-logo
Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

760 mA

Maximum Drain Source Voltage

30 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

920 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Length

1.08mm

Typical Gate Charge @ Vgs

1.5 nC @ 8 V

Maximum Operating Temperature

+150 °C

Width

0.675mm

Transistor Material

Si

Height

0.35mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

P.O.A.

Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

Diodes Inc P-Channel MOSFET, 760 mA, 30 V, 3-Pin X2-DFN1006 DMP31D0UFB4-7B
Επιλέγξτε συσκευασία

P.O.A.

Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α

Diodes Inc P-Channel MOSFET, 760 mA, 30 V, 3-Pin X2-DFN1006 DMP31D0UFB4-7B

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

P

Maximum Continuous Drain Current

760 mA

Maximum Drain Source Voltage

30 V

Package Type

X2-DFN1006

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Maximum Power Dissipation

920 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Length

1.08mm

Typical Gate Charge @ Vgs

1.5 nC @ 8 V

Maximum Operating Temperature

+150 °C

Width

0.675mm

Transistor Material

Si

Height

0.35mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

P-Channel MOSFET, 30V, Diodes Inc

MOSFET Transistors, Diodes Inc.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more