Dual N-Channel MOSFET, 11.4 A, 60 V, 8-Pin V-DFN3030 Diodes Inc DMT6018LDR-13

Κωδικός Προϊόντος της RS: 182-6931Κατασκευαστής: DiodesZetexΚωδικός Κατασκευαστή: DMT6018LDR-13
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

60 V

Package Type

V-DFN3030

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.9 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

3.05mm

Typical Gate Charge @ Vgs

13.9 nC @ 10V

Width

3.05mm

Number of Elements per Chip

2

Height

0.8mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,81

Μονάδας (Σε ένα καρούλι των 10000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,004

Μονάδας (Σε ένα καρούλι των 10000) (Including VAT) Με Φ.Π.Α

Dual N-Channel MOSFET, 11.4 A, 60 V, 8-Pin V-DFN3030 Diodes Inc DMT6018LDR-13

€ 0,81

Μονάδας (Σε ένα καρούλι των 10000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,004

Μονάδας (Σε ένα καρούλι των 10000) (Including VAT) Με Φ.Π.Α

Dual N-Channel MOSFET, 11.4 A, 60 V, 8-Pin V-DFN3030 Diodes Inc DMT6018LDR-13
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

11.4 A

Maximum Drain Source Voltage

60 V

Package Type

V-DFN3030

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

26 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.9 W

Maximum Gate Source Voltage

±20 V

Maximum Operating Temperature

+150 °C

Length

3.05mm

Typical Gate Charge @ Vgs

13.9 nC @ 10V

Width

3.05mm

Number of Elements per Chip

2

Height

0.8mm

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more