Diodes Inc Dual N/P-Channel MOSFET, 2.6 A, 4.7 A, 60 V, 8-Pin SOIC ZXMC4559DN8TA
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
2.6 A, 4.7 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
75 mΩ, 125 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Typical Gate Charge @ Vgs
20.4 nC @ 10 V, 24.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
P.O.A.
Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α
Standard
20
P.O.A.
Μονάδας (Σε ένα πακέτο των 20) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
20
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
2.6 A, 4.7 A
Maximum Drain Source Voltage
60 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
75 mΩ, 125 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Width
3.95mm
Transistor Material
Si
Number of Elements per Chip
2
Length
4.95mm
Typical Gate Charge @ Vgs
20.4 nC @ 10 V, 24.2 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
1.5mm
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products