Diodes Inc Quad N/P-Channel MOSFET, 1.8 A, 1.5 A, 60 V, 8-Pin SM ZXMHC6A07T8TA
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
1.8 A, 1.5 A
Maximum Drain Source Voltage
60 V
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
300 mΩ, 425 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
1.65 nC @ 5 V, 2.4 nC @ 5 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
4
Length
6.7mm
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Country of Origin
Germany
Product details
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 4.18
€ 2.09 Each (Supplied on a Reel) (Exc. Vat)
€ 5.18
€ 2.592 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
2
€ 4.18
€ 2.09 Each (Supplied on a Reel) (Exc. Vat)
€ 5.18
€ 2.592 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
2
Stock information temporarily unavailable.
Please check again later.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
DiodesZetexChannel Type
N, P
Maximum Continuous Drain Current
1.8 A, 1.5 A
Maximum Drain Source Voltage
60 V
Package Type
SM
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
300 mΩ, 425 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Maximum Power Dissipation
1.7 W
Transistor Configuration
Full Bridge
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
1.65 nC @ 5 V, 2.4 nC @ 5 V
Width
3.7mm
Transistor Material
Si
Number of Elements per Chip
4
Length
6.7mm
Maximum Operating Temperature
+150 °C
Height
1.6mm
Minimum Operating Temperature
-55 °C
Country of Origin
Germany
Product details
Complementary Enhancement Mode MOSFET H-Bridge, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products