onsemi FGA25N120ANTDTU IGBT, 50 A 1200 V, 3-Pin TO-3PN, Through Hole
Τεχνικό φυλλάδιο
Προδιαγραφές
Maximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Dimensions
15.8 x 5 x 18.9mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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P.O.A.
Standard
1
P.O.A.
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Maximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Package Type
TO-3PN
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Dimensions
15.8 x 5 x 18.9mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Λεπτομέρειες Προϊόντος
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products