Fuji Electric 6MBI75U4B-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 35-Pin M633, PCB Mount

Κωδικός Προϊόντος της RS: 462-833Κατασκευαστής: Fuji ElectricΚωδικός Κατασκευαστή: 6MBI75U4B-120-50
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Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

390 W

Package Type

M633

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

35

Transistor Configuration

3 Phase

Dimensions

122 x 62 x 17mm

Maximum Operating Temperature

+150 °C

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

IGBT Modules 6-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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Fuji Electric 6MBI75U4B-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 35-Pin M633, PCB Mount

P.O.A.

Fuji Electric 6MBI75U4B-120-50 3 Phase Bridge IGBT Module, 75 A 1200 V, 35-Pin M633, PCB Mount
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

75 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

390 W

Package Type

M633

Configuration

3 Phase Bridge

Mounting Type

PCB Mount

Channel Type

N

Pin Count

35

Transistor Configuration

3 Phase

Dimensions

122 x 62 x 17mm

Maximum Operating Temperature

+150 °C

Χώρα Προέλευσης

Japan

Λεπτομέρειες Προϊόντος

IGBT Modules 6-Pack, Fuji Electric

IGBT Discretes & Modules, Fuji Electric

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more