Infineon 6EDL04I06PTXUMA1, MOSFET 6, 420 mA, 17.5V 28-Pin, DSO
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonOutput Current
420 mA
Supply Voltage
17.5V
Pin Count
28
Package Type
DSO
Fall Time
45ns
Number of Outputs
6
Rise Time
100ns
Topology
Galvanic Isolated
High and Low Sides Dependency
Independent
Number of Drivers
6
Time Delay
800ns
Bridge Type
Full Bridge
Polarity
Non-Inverting
Mounting Type
Surface Mount
Χώρα Προέλευσης
Malaysia
Λεπτομέρειες Προϊόντος
EiceDRIVER 3-Phase Gate Drive IC, Infineon
3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.
MOSFET & IGBT Drivers, Infineon (International Rectifier)
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
P.O.A.
1000
P.O.A.
1000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonOutput Current
420 mA
Supply Voltage
17.5V
Pin Count
28
Package Type
DSO
Fall Time
45ns
Number of Outputs
6
Rise Time
100ns
Topology
Galvanic Isolated
High and Low Sides Dependency
Independent
Number of Drivers
6
Time Delay
800ns
Bridge Type
Full Bridge
Polarity
Non-Inverting
Mounting Type
Surface Mount
Χώρα Προέλευσης
Malaysia
Λεπτομέρειες Προϊόντος
EiceDRIVER 3-Phase Gate Drive IC, Infineon
3-phase 600V MOSFET and IGBT gate driver ICs from Infineon based on proven existing SOI-technology. The absence of parasitic thyristor structures in these rugged devices prevents latch-up under all normal operating conditions. The drivers include under-voltage over-current detection and can be controlled by CMOS or LSTTL compatible signals down to 3.3V.
MOSFET & IGBT Drivers, Infineon (International Rectifier)
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products