Infineon AIM SiC N-Channel MOSFET, 100 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R020M1TXKSA1

Κωδικός Προϊόντος της RS: 349-373Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: AIMZH120R020M1TXKSA1
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

1200 V

Series

AIM

Package Type

PG-TO247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Χώρα Προέλευσης

China

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 47,32

€ 47,32 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 58,68

€ 58,68 Μονάδας Με Φ.Π.Α

Infineon AIM SiC N-Channel MOSFET, 100 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R020M1TXKSA1

€ 47,32

€ 47,32 Μονάδας (Exc. Vat)Χωρίς Φ.Π.Α

€ 58,68

€ 58,68 Μονάδας Με Φ.Π.Α

Infineon AIM SiC N-Channel MOSFET, 100 A, 1200 V, 4-Pin PG-TO247-4 AIMZH120R020M1TXKSA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδας
1 - 9€ 47,32
10 - 99€ 43,25
100+€ 40,49

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

1200 V

Series

AIM

Package Type

PG-TO247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

Χώρα Προέλευσης

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more