N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC011N03LSIATMA1

Κωδικός Προϊόντος της RS: 178-7496Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: BSC011N03LSIATMA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.4 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Height

1.1mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.56V

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 1,36

Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,686

Μονάδας (Σε ένα καρούλι των 5000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC011N03LSIATMA1

€ 1,36

Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,686

Μονάδας (Σε ένα καρούλι των 5000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON Infineon BSC011N03LSIATMA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

100 A

Maximum Drain Source Voltage

30 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

1.4 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

96 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

34 nC @ 4.5 V

Height

1.1mm

Series

OptiMOS

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.56V

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™ Power MOSFET Family

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.