Infineon OptiMOS™ 5 N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON BSC028N06NSATMA1

Κωδικός Προϊόντος της RS: 906-4296Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: BSC028N06NSATMA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

137 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 28,50

€ 2,85 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 35,34

€ 3,534 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

Infineon OptiMOS™ 5 N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON BSC028N06NSATMA1
Επιλέγξτε συσκευασία

€ 28,50

€ 2,85 Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α

€ 35,34

€ 3,534 Μονάδας (Σε ένα πακέτο των 10) Με Φ.Π.Α

Infineon OptiMOS™ 5 N-Channel MOSFET, 137 A, 60 V, 8-Pin TDSON BSC028N06NSATMA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
10 - 40€ 2,85€ 28,50
50 - 90€ 2,74€ 27,40
100 - 240€ 2,66€ 26,60
250 - 490€ 2,58€ 25,80
500+€ 2,43€ 24,30

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

137 A

Maximum Drain Source Voltage

60 V

Package Type

TDSON

Series

OptiMOS™ 5

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

4.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.3V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

5.35mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

6.1mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Height

1.1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more