Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
30 V
Package Type
TDSON
Series
OptiMOS™
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Number of Elements per Chip
1
Width
5.35mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 2.350,00
€ 0,47 Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2.914,00
€ 0,583 Μονάδας (Σε ένα καρούλι των 5000) Με Φ.Π.Α
5000
€ 2.350,00
€ 0,47 Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 2.914,00
€ 0,583 Μονάδας (Σε ένα καρούλι των 5000) Με Φ.Π.Α
5000
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
57 A
Maximum Drain Source Voltage
30 V
Package Type
TDSON
Series
OptiMOS™
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
7.2 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
28 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Length
6.1mm
Typical Gate Charge @ Vgs
12 nC @ 10 V
Number of Elements per Chip
1
Width
5.35mm
Height
1.1mm
Minimum Operating Temperature
-55 °C
Χώρα Προέλευσης
China
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.