N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1

Κωδικός Προϊόντος της RS: 170-2290Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: BSC12DN20NS3GATMA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5.35mm

Height

1.1mm

Series

BSC12DN20NS3 G

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

€ 0,83

Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,029

Μονάδας (Σε ένα καρούλι των 5000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1

€ 0,83

Μονάδας (Σε ένα καρούλι των 5000) (Exc. Vat)Χωρίς Φ.Π.Α

€ 1,029

Μονάδας (Σε ένα καρούλι των 5000) (Including VAT) Με Φ.Π.Α

N-Channel MOSFET, 11.3 A, 200 V, 8-Pin TDSON Infineon BSC12DN20NS3GATMA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

11.3 A

Maximum Drain Source Voltage

200 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

50 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

6.35mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

6.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Length

5.35mm

Height

1.1mm

Series

BSC12DN20NS3 G

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more