N-Channel MOSFET, 45 A, 100 V, 8-Pin TDSON Infineon BSC196N10NSGATMA1

Κωδικός Προϊόντος της RS: 178-7425Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: BSC196N10NSGATMA1
brand-logo
View all in MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.7 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

5.35mm

Number of Elements per Chip

1

Forward Diode Voltage

1.3V

Height

1.1mm

Series

OptiMOS 2

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Παρακαλούμε ελέγξτε ξανά αργότερα.

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

P.O.A.

N-Channel MOSFET, 45 A, 100 V, 8-Pin TDSON Infineon BSC196N10NSGATMA1

P.O.A.

N-Channel MOSFET, 45 A, 100 V, 8-Pin TDSON Infineon BSC196N10NSGATMA1
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

100 V

Package Type

TDSON

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

16.7 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

78 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

6.1mm

Typical Gate Charge @ Vgs

25 nC @ 10 V

Width

5.35mm

Number of Elements per Chip

1

Forward Diode Voltage

1.3V

Height

1.1mm

Series

OptiMOS 2

Minimum Operating Temperature

-55 °C

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™2 Power MOSFET Family

Infineon’s OptiMOS™2 N-Channel family offers the industry's lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.