N-Channel MOSFET, 17 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126H6327XTSA2
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.4 nC @ 5 V
Width
1.3mm
Transistor Material
Si
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Height
1mm
Χώρα Προέλευσης
China
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P.O.A.
Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
Συσκευασία Παραγωγής (Καρούλι)
10
P.O.A.
Μονάδας (διαθέσιμο σε ένα καρούλι) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Συσκευασία Παραγωγής (Καρούλι)
10
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
17 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
2.9mm
Typical Gate Charge @ Vgs
1.4 nC @ 5 V
Width
1.3mm
Transistor Material
Si
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Height
1mm
Χώρα Προέλευσης
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products