N-Channel MOSFET, 230 mA, 60 V, 3-Pin SOT-23 Infineon BSS138NH6433XTMA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Width
1.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 0,08
Μονάδας (Σε ένα καρούλι των 10000) (Exc. Vat)Χωρίς Φ.Π.Α
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Μονάδας (Σε ένα καρούλι των 10000) (Including VAT) Με Φ.Π.Α
10000
€ 0,08
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10000
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας | Per Καρούλι |
|---|---|---|
| 10000 - 10000 | € 0,08 | € 800,00 |
| 20000 - 20000 | € 0,08 | € 800,00 |
| 30000+ | € 0,08 | € 800,00 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
230 mA
Maximum Drain Source Voltage
60 V
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
3.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.4V
Minimum Gate Threshold Voltage
0.6V
Maximum Power Dissipation
360 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Length
2.9mm
Typical Gate Charge @ Vgs
1 nC @ 10 V
Width
1.3mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Height
1mm
Series
SIPMOS
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products