N-Channel MOSFET Transistor, 540 mA, 55 V, 3-Pin SOT-23 Infineon BSS670S2L

Κωδικός Προϊόντος της RS: 826-8251Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: BSS670S2L
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Προβολή όλων σε MOSFETs

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

540 mA

Maximum Drain Source Voltage

55 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

650 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

360 mW

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

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Infineon OptiMOS™ N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1
€ 0,285Μονάδας (Σε ένα καρούλι των 250) (Exc. Vat)Χωρίς Φ.Π.Α

P.O.A.

Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α

N-Channel MOSFET Transistor, 540 mA, 55 V, 3-Pin SOT-23 Infineon BSS670S2L

P.O.A.

Μονάδας (Σε ένα πακέτο των 50) (Exc. Vat)Χωρίς Φ.Π.Α

N-Channel MOSFET Transistor, 540 mA, 55 V, 3-Pin SOT-23 Infineon BSS670S2L

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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon OptiMOS™ N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1
€ 0,285Μονάδας (Σε ένα καρούλι των 250) (Exc. Vat)Χωρίς Φ.Π.Α

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

540 mA

Maximum Drain Source Voltage

55 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

650 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

360 mW

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

1.7 nC @ 10 V

Minimum Operating Temperature

-55 °C

Χώρα Προέλευσης

Malaysia

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Μπορεί να σας ενδιαφέρει
Infineon OptiMOS™ N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1
€ 0,285Μονάδας (Σε ένα καρούλι των 250) (Exc. Vat)Χωρίς Φ.Π.Α