Infineon OptiMOS™ 3 N-Channel MOSFET, 10.9 A, 250 V, 8-Pin PQFN 3 x 3 BSZ16DN25NS3GATMA1

RS Stock No.: 214-8987Brand: InfineonManufacturers Part No.: BSZ16DN25NS3GATMA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10.9 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™ 3

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.165 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

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Stock information temporarily unavailable.

€ 7,050.00

€ 1.41 Each (On a Reel of 5000) (Exc. Vat)

€ 8,742.00

€ 1.748 Each (On a Reel of 5000) (inc. VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET, 10.9 A, 250 V, 8-Pin PQFN 3 x 3 BSZ16DN25NS3GATMA1

€ 7,050.00

€ 1.41 Each (On a Reel of 5000) (Exc. Vat)

€ 8,742.00

€ 1.748 Each (On a Reel of 5000) (inc. VAT)

Infineon OptiMOS™ 3 N-Channel MOSFET, 10.9 A, 250 V, 8-Pin PQFN 3 x 3 BSZ16DN25NS3GATMA1
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

10.9 A

Maximum Drain Source Voltage

250 V

Series

OptiMOS™ 3

Package Type

PQFN 3 x 3

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.165 O

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Transistor Material

Si

Number of Elements per Chip

1

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more