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Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole

Κωδικός Προϊόντος της RS: 284-666Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: F3L225R12W3H3B11BPSA1
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Προβολή όλων σε IGBTs

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

225 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

20 mW

Number of Transistors

4

Package Type

AG-62MMHB

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

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Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole

P.O.A.

Infineon F3L225R12W3H3B11BPSA1 Single Collector, Single Emitter, Single Gate IGBT, 225 A 1200 V AG-62MMHB, Through Hole
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Maximum Continuous Collector Current

225 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

20 mW

Number of Transistors

4

Package Type

AG-62MMHB

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more