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Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1

RS Stock No.: 277-194Brand: InfineonManufacturers Part No.: FF2000UXTR33T2M1BPSA1
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Technical Document

Specifications

Channel Type

Dual N

Maximum Continuous Drain Current

925 A

Maximum Drain Source Voltage

3300 V

Series

XHP

Package Type

Tray

Mounting Type

Screw Mount

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Country of Origin

Germany

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Stock information temporarily unavailable.

€ 11,297.20

€ 11,297.20 Each (Exc. Vat)

€ 14,008.53

€ 14,008.53 Each (inc. VAT)

Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1

€ 11,297.20

€ 11,297.20 Each (Exc. Vat)

€ 14,008.53

€ 14,008.53 Each (inc. VAT)

Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1
Stock information temporarily unavailable.

Stock information temporarily unavailable.

Please check again later.

Ideate. Create. Collaborate

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design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

Dual N

Maximum Continuous Drain Current

925 A

Maximum Drain Source Voltage

3300 V

Series

XHP

Package Type

Tray

Mounting Type

Screw Mount

Channel Mode

Enhancement

Number of Elements per Chip

2

Transistor Material

SiC

Country of Origin

Germany

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more