Infineon FF50R12RT4HOSA1 Dual IGBT, 50 A 1200 V AG-34MM, Chassis Mount
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
285 W
Number of Transistors
2
Package Type
AG-34MM
Configuration
Dual
Mounting Type
Chassis Mount
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Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 107,58
Each (In a Tray of 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 133,399
Each (In a Tray of 10) Με Φ.Π.Α
10
€ 107,58
Each (In a Tray of 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 133,399
Each (In a Tray of 10) Με Φ.Π.Α
10
Αγοράστε μαζικά
| Quantity Ποσότητα | Τιμή μονάδας | Per Tray |
|---|---|---|
| 10 - 40 | € 107,58 | € 1.075,80 |
| 50+ | € 107,08 | € 1.070,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMaximum Continuous Collector Current
50 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
285 W
Number of Transistors
2
Package Type
AG-34MM
Configuration
Dual
Mounting Type
Chassis Mount
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products