Infineon CoolSiC Dual SiC N-Channel SiC Power Module, 200 A, 1200 V AG-EASY2B FF6MR12W2M1B11BOMA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
200 A
Maximum Drain Source Voltage
1200 V
Series
CoolSiC
Package Type
AG-EASY2B
Mounting Type
Screw Mount
Maximum Drain Source Resistance
0.00825 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.55V
Number of Elements per Chip
2
Transistor Material
SiC
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P.O.A.
Each (In a Tray of 15) (Exc. Vat)Χωρίς Φ.Π.Α
15
P.O.A.
Each (In a Tray of 15) (Exc. Vat)Χωρίς Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
15
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
200 A
Maximum Drain Source Voltage
1200 V
Series
CoolSiC
Package Type
AG-EASY2B
Mounting Type
Screw Mount
Maximum Drain Source Resistance
0.00825 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.55V
Number of Elements per Chip
2
Transistor Material
SiC
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products