Infineon 4Mbit Parallel FRAM Memory 44-Pin TSOP, FM22L16-55-TG
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMemory Size
4Mbit
Organisation
256K x 16 bit
Interface Type
Parallel
Maximum Random Access Time
55ns
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+85 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
16bit
Number of Words
256K
Minimum Operating Temperature
-40 °C
Λεπτομέρειες Προϊόντος
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMemory Size
4Mbit
Organisation
256K x 16 bit
Interface Type
Parallel
Maximum Random Access Time
55ns
Mounting Type
Surface Mount
Package Type
TSOP
Pin Count
44
Dimensions
18.51 x 10.26 x 1.04mm
Maximum Operating Supply Voltage
3.6 V
Maximum Operating Temperature
+85 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
16bit
Number of Words
256K
Minimum Operating Temperature
-40 °C
Λεπτομέρειες Προϊόντος
F-RAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products