Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Length
4.5mm
Width
4mm
Maximum Operating Supply Voltage
3.65 V
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Λεπτομέρειες Προϊόντος
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 6,22
€ 3,11 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,71
€ 3,856 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Standard
2
€ 6,22
€ 3,11 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 7,71
€ 3,856 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Standard
2
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 2 - 8 | € 3,11 | € 6,22 |
| 10 - 48 | € 2,74 | € 5,48 |
| 50 - 98 | € 2,69 | € 5,38 |
| 100 - 498 | € 2,45 | € 4,90 |
| 500+ | € 2,38 | € 4,76 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMemory Size
64kbit
Organisation
8K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
DFN
Pin Count
8
Dimensions
4 x 4.5 x 0.7mm
Length
4.5mm
Width
4mm
Maximum Operating Supply Voltage
3.65 V
Height
0.7mm
Maximum Operating Temperature
+85 °C
Number of Words
8K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Λεπτομέρειες Προϊόντος
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.


