Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Width
3.98mm
Maximum Operating Supply Voltage
3.6 V
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Words
2K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Χώρα Προέλευσης
United States
Λεπτομέρειες Προϊόντος
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
€ 23,85
€ 1,59 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α
€ 29,57
€ 1,972 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α
Συσκευασία Παραγωγής (Ράγα)
15
€ 23,85
€ 1,59 Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α
€ 29,57
€ 1,972 Μονάδας (διαθέσιμο σε μία ράγα) Με Φ.Π.Α
Συσκευασία Παραγωγής (Ράγα)
15
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
---|---|---|
15 - 25 | € 1,59 | € 7,95 |
30 - 95 | € 1,57 | € 7,85 |
100 - 495 | € 1,41 | € 7,05 |
500+ | € 1,38 | € 6,90 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMemory Size
16kbit
Organisation
2K x 8 bit
Interface Type
SPI
Data Bus Width
8bit
Maximum Random Access Time
20ns
Mounting Type
Surface Mount
Package Type
SOIC
Pin Count
8
Dimensions
4.97 x 3.98 x 1.48mm
Length
4.97mm
Width
3.98mm
Maximum Operating Supply Voltage
3.6 V
Height
1.48mm
Maximum Operating Temperature
+85 °C
Number of Words
2K
Minimum Operating Temperature
-40 °C
Minimum Operating Supply Voltage
2.7 V
Number of Bits per Word
8bit
Automotive Standard
AEC-Q100
Χώρα Προέλευσης
United States
Λεπτομέρειες Προϊόντος
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.