Infineon IKB30N65EH5ATMA1 IGBT, 30 A 650 V, 3-Pin TO-263, Through Hole
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Maximum Power Dissipation
188 W
Number of Transistors
1
Package Type
TO-263
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
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Παρακαλούμε ελέγξτε ξανά αργότερα.
€ 3,65
Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 4,526
Μονάδας (Σε ένα καρούλι των 1000) (Including VAT) Με Φ.Π.Α
1000
€ 3,65
Μονάδας (Σε ένα καρούλι των 1000) (Exc. Vat)Χωρίς Φ.Π.Α
€ 4,526
Μονάδας (Σε ένα καρούλι των 1000) (Including VAT) Με Φ.Π.Α
1000
Ideate. Create. Collaborate
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- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Maximum Power Dissipation
188 W
Number of Transistors
1
Package Type
TO-263
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products