Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Number of Transistors
1
Maximum Power Dissipation
395 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Energy Rating
3.35mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
4500pF
Maximum Operating Temperature
+175 °C
Λεπτομέρειες Προϊόντος
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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€ 8,65
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 10,726
Μονάδας (Σε ένα πακέτο των 10) (Including VAT) Με Φ.Π.Α
10
€ 8,65
Μονάδας (Σε ένα πακέτο των 10) (Exc. Vat)Χωρίς Φ.Π.Α
€ 10,726
Μονάδας (Σε ένα πακέτο των 10) (Including VAT) Με Φ.Π.Α
10
Αγοράστε μαζικά
Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
---|---|---|
10 - 10 | € 8,65 | € 86,50 |
20 - 40 | € 8,34 | € 83,40 |
50 - 90 | € 8,12 | € 81,20 |
100 - 190 | € 7,69 | € 76,90 |
200+ | € 7,33 | € 73,30 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonMaximum Continuous Collector Current
80 A
Maximum Collector Emitter Voltage
650 V
Maximum Gate Emitter Voltage
±20 V, ±30V
Number of Transistors
1
Maximum Power Dissipation
395 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Switching Speed
30kHz
Transistor Configuration
Single
Dimensions
16.13 x 5.21 x 21.1mm
Energy Rating
3.35mJ
Minimum Operating Temperature
-40 °C
Gate Capacitance
4500pF
Maximum Operating Temperature
+175 °C
Λεπτομέρειες Προϊόντος
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.