Infineon CoolSiC Silicon N-Channel MOSFET, 24 A, 650 V, 3-Pin TO-247 IMW65R083M1HXKSA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.111 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Number of Elements per Chip
1
Transistor Material
Silicon
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€ 238,20
€ 7,94 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 295,37
€ 9,846 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
€ 238,20
€ 7,94 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 295,37
€ 9,846 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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| Quantity Ποσότητα | Τιμή μονάδας | Per Ράγα |
|---|---|---|
| 30 - 30 | € 7,94 | € 238,20 |
| 60 - 120 | € 7,65 | € 229,50 |
| 150+ | € 7,26 | € 217,80 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
24 A
Maximum Drain Source Voltage
650 V
Series
CoolSiC
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.111 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5.7V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products