Infineon CoolSiC 2000 V SiC Trench MOSFET SiC N-Channel MOSFET, 89 A, 2000 V, 4-Pin PG-TO247-4-PLUS-NT14
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Package Type
PG-TO247-4-PLUS-NT14
Series
CoolSiC 2000 V SiC Trench MOSFET
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Χώρα Προέλευσης
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 3.339,00
€ 111,30 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 4.140,36
€ 138,012 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
€ 3.339,00
€ 111,30 Μονάδας (Σε μία ράγα των 30) (Exc. Vat)Χωρίς Φ.Π.Α
€ 4.140,36
€ 138,012 Μονάδας (Σε μία ράγα των 30) Με Φ.Π.Α
30
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
89 A
Maximum Drain Source Voltage
2000 V
Package Type
PG-TO247-4-PLUS-NT14
Series
CoolSiC 2000 V SiC Trench MOSFET
Mounting Type
Through Hole
Pin Count
4
Channel Mode
Enhancement
Transistor Material
SiC
Number of Elements per Chip
1
Χώρα Προέλευσης
Malaysia
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products