Infineon OptiMOS™ 3 N-Channel MOSFET, 37 A, 150 V, 3-Pin TO-220 FP IPA105N15N3GXKSA1

Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™ 3
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.15mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
€ 28,00
€ 7,00 Μονάδας (Σε ένα πακέτο των 4) (Exc. Vat)Χωρίς Φ.Π.Α
€ 34,72
€ 8,68 Μονάδας (Σε ένα πακέτο των 4) Με Φ.Π.Α
4
€ 28,00
€ 7,00 Μονάδας (Σε ένα πακέτο των 4) (Exc. Vat)Χωρίς Φ.Π.Α
€ 34,72
€ 8,68 Μονάδας (Σε ένα πακέτο των 4) Με Φ.Π.Α
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
4
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
---|---|---|
4 - 16 | € 7,00 | € 28,00 |
20 - 36 | € 6,76 | € 27,04 |
40 - 96 | € 6,58 | € 26,32 |
100 - 196 | € 6,37 | € 25,48 |
200+ | € 6,03 | € 24,12 |
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
37 A
Maximum Drain Source Voltage
150 V
Series
OptiMOS™ 3
Package Type
TO-220 FP
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
11.1 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
40.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.85mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
41 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
16.15mm
Forward Diode Voltage
1.2V
Minimum Operating Temperature
-55 °C
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.