Infineon CoolMOS™ CE N-Channel MOSFET, 13 A, 550 V, 3-Pin TO-220 IPA50R280CEXKSA2
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
550 V
Series
CoolMOS™ CE
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
32.6 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.9mm
Transistor Material
Si
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.85V
Height
16.15mm
Λεπτομέρειες Προϊόντος
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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P.O.A.
Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α
Συσκευασία Παραγωγής (Ράγα)
5
P.O.A.
Μονάδας (διαθέσιμο σε μία ράγα) (Exc. Vat)Χωρίς Φ.Π.Α
Συσκευασία Παραγωγής (Ράγα)
5
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
Παρακαλούμε ελέγξτε ξανά αργότερα.
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
13 A
Maximum Drain Source Voltage
550 V
Series
CoolMOS™ CE
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
280 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
30.4 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Number of Elements per Chip
1
Length
10.65mm
Typical Gate Charge @ Vgs
32.6 nC @ 10 V
Maximum Operating Temperature
+150 °C
Width
4.9mm
Transistor Material
Si
Minimum Operating Temperature
-40 °C
Forward Diode Voltage
0.85V
Height
16.15mm
Λεπτομέρειες Προϊόντος
Infineon CoolMOS™ CE Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products