N-Channel MOSFET, 13.8 A, 650 V, 3-Pin TO-220 Infineon IPA60R280P6XKSA1

Κωδικός Προϊόντος της RS: 145-9327Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPA60R280P6XKSA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

13.8 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

32 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Transistor Material

Si

Length

10.65mm

Typical Gate Charge @ Vgs

25.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.15mm

Series

CoolMOS P6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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N-Channel MOSFET, 13.8 A, 650 V, 3-Pin TO-220 Infineon IPA60R280P6XKSA1

P.O.A.

N-Channel MOSFET, 13.8 A, 650 V, 3-Pin TO-220 Infineon IPA60R280P6XKSA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

13.8 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

32 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

4.9mm

Number of Elements per Chip

1

Transistor Material

Si

Length

10.65mm

Typical Gate Charge @ Vgs

25.5 nC @ 10 V

Maximum Operating Temperature

+150 °C

Height

16.15mm

Series

CoolMOS P6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V

Χώρα Προέλευσης

China

Λεπτομέρειες Προϊόντος

Infineon CoolMOS™E6/P6 series Power MOSFET

The Infineon range of CoolMOSE6 and P6 series MOSFETs. These highly efficient devices can be used in several applications including Power Factor Correction (PFC), lighting and consumer devices as well as solar, telecoms and servers.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.