Infineon OptiMOS™ 5 N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 IPB010N06NATMA1
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ 5
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.45mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.2V
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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€ 19,74
€ 9,87 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 24,48
€ 12,239 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Standard
2
€ 19,74
€ 9,87 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α
€ 24,48
€ 12,239 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α
Standard
2
Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη
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| Quantity Ποσότητα | Τιμή μονάδας | Per Πακέτο |
|---|---|---|
| 2 - 18 | € 9,87 | € 19,74 |
| 20 - 98 | € 8,54 | € 17,08 |
| 100 - 198 | € 7,52 | € 15,04 |
| 200 - 498 | € 7,20 | € 14,40 |
| 500+ | € 6,55 | € 13,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Τεχνικό φυλλάδιο
Προδιαγραφές
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
180 A
Maximum Drain Source Voltage
60 V
Series
OptiMOS™ 5
Package Type
D2PAK-7
Mounting Type
Surface Mount
Pin Count
7
Maximum Drain Source Resistance
1.5 mΩ
Channel Mode
Enhancement
Maximum Power Dissipation
300 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
4.57mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.31mm
Typical Gate Charge @ Vgs
208 nC @ 10 V
Maximum Operating Temperature
+175 °C
Height
9.45mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4.2V
Λεπτομέρειες Προϊόντος
Infineon OptiMOS™5 Power MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products