Infineon OptiMOS™ 5 N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 IPB010N06NATMA1

Κωδικός Προϊόντος της RS: 906-4353Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPB010N06NATMA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

208 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.2V

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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€ 16,24

€ 8,12 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 20,14

€ 10,069 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α

Infineon OptiMOS™ 5 N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 IPB010N06NATMA1
Επιλέγξτε συσκευασία

€ 16,24

€ 8,12 Μονάδας (Σε ένα πακέτο των 2) (Exc. Vat)Χωρίς Φ.Π.Α

€ 20,14

€ 10,069 Μονάδας (Σε ένα πακέτο των 2) Με Φ.Π.Α

Infineon OptiMOS™ 5 N-Channel MOSFET, 180 A, 60 V, 7-Pin D2PAK-7 IPB010N06NATMA1

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Επιλέγξτε συσκευασία

Ημερομηνία αποθέματος προσωρινά μη διαθέσιμη

Quantity ΠοσότηταΤιμή μονάδαςPer Πακέτο
2 - 18€ 8,12€ 16,24
20 - 98€ 7,05€ 14,10
100 - 198€ 6,19€ 12,38
200 - 498€ 5,95€ 11,90
500+€ 5,40€ 10,80

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

1.5 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.57mm

Transistor Material

Si

Number of Elements per Chip

1

Length

10.31mm

Typical Gate Charge @ Vgs

208 nC @ 10 V

Maximum Operating Temperature

+175 °C

Height

9.45mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

4.2V

Λεπτομέρειες Προϊόντος

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more