N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB017N10N5ATMA1

Κωδικός Προϊόντος της RS: 171-1965Κατασκευαστής: InfineonΚωδικός Κατασκευαστή: IPB017N10N5ATMA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

7 + Tab

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

11.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

168 nC @ 10 V

Height

4.57mm

Series

IPB017N10N5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB017N10N5ATMA1
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P.O.A.

N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB017N10N5ATMA1
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Τεχνικό φυλλάδιο

Προδιαγραφές

Channel Type

N

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

100 V

Package Type

TO-263

Mounting Type

Surface Mount

Pin Count

7 + Tab

Maximum Drain Source Resistance

2.2 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.8V

Minimum Gate Threshold Voltage

2.2V

Maximum Power Dissipation

375 W

Transistor Configuration

Single

Maximum Gate Source Voltage

20 V

Width

11.05mm

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Length

10.31mm

Typical Gate Charge @ Vgs

168 nC @ 10 V

Height

4.57mm

Series

IPB017N10N5

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V